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DMN2500UFB4
Maximum Ratings @T A = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
20
±6
Units
V
V
Continuous Drain Current (Note 4) V GS = 4.5V
Continuous Drain Current (Note 5) V GS = 4.5V
Pulsed Drain Current (10 μ s pulse, duty cycle = 1%)
Maximum Body Diode continuous Current
Steady
State
t<10s
Steady
State
t<10s
T A = 25°C
T A = 70°C
T A = 25°C
T A = 70°C
T A = 25°C
T A = 70°C
T A = 25°C
T A = 70°C
I D
I D
I D
I D
I DM
I S
810
640
950
750
1000
800
1200
1000
4
850
mA
mA
mA
mA
A
mA
Thermal Characteristics
@T A = 25°C unless otherwise specified
Characteristic
Symbol
Value
Units
Total Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient (Note 4)
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range
T A = 25°C
T A = 70°C
Steady state
t<10s
T A = 25°C
T A = 70°C
Steady state
t<10s
P D
R θ JA
P D
R θ JA
T J, T STG
0.46
0.29
279
210
0.95
0.6
134
100
-55 to +150
W
°C/W
°C/W
W
°C/W
°C/W
°C
Electrical Characteristics @T A = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current T J = 25°C
Gate-Source Leakage
BV DSS
I DSS
I GSS
20
-
-
-
-
-
-
100
±1.0
V
nA
μ A
V GS = 0V, I D = 250 μ A
V DS = 20V, V GS = 0V
V GS = ±4.5V, V DS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V GS(th)
0.5
-
1.0
V
V DS = V GS , I D = 250 μ A
0.3
0.4
V GS = 4.5V, I D = 600mA
Static Drain-Source On-Resistance
R DS (ON)
-
0.4
0.5
Ω
V GS = 2.5V, I D = 500mA
0.5
0.7
V GS = 1.8V, I D = 350mA
Forward Transfer Admittance
Diode Forward Voltage
|Y fs |
V SD
-
1.4
0.7
-
1.2
S
V
V DS = 10V, I D = 400mA
V GS = 0V, I S = 150mA
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
C iss
C oss
C rss
R g
Q g
Q gs
Q gd
t D(on)
t r
t D(off)
t f
-
-
-
-
-
-
-
-
-
-
-
60.67
9.68
5.37
93
736.6
93.6
116.6
5.1
7.4
26.7
12.3
-
-
-
-
-
-
-
-
-
-
-
pF
pF
pF
Ω
pC
pC
pC
ns
ns
ns
ns
V DS =16V, V GS = 0V,
f = 1.0MHz
V DS = 0V, V GS = 0V, f = 1.0MHz
V GS = 4.5V, V DS = 10V,
I D = 250mA
V DD = 10V, V GS = 4.5V,
R L = 47 ? , R G = 10 ? ,
I D = 200mA
Notes:
4. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.
DMN2500UFB4
Document number: DS35724 Rev. 3 - 2
2 of 5
www.diodes.com
March 2012
? Diodes Incorporated
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